1 research outputs found
Carbon antisite clusters in SiC: a possible pathway to the D_{II} center
The photoluminescence center D_{II} is a persistent intrinsic defect which is
common in all SiC polytypes. Its fingerprints are the characteristic phonon
replicas in luminescence spectra. We perform ab-initio calculations of
vibrational spectra for various defect complexes and find that carbon antisite
clusters exhibit vibrational modes in the frequency range of the D_{II}
spectrum. The clusters possess very high binding energies which guarantee their
thermal stability--a known feature of the D_{II} center. The di-carbon antisite
(C_{2})_{Si} (two carbon atoms sharing a silicon site) is an important building
block of these clusters.Comment: RevTeX 4, 6 pages, 3 figures Changes in version 2: Section headings,
footnote included in text, vibrational data now given for neutral
split-interstitial, extended discussion of the [(C_2)_Si]_2 defect incl.
figure Changes version 3: Correction of binding energy for 3rd and 4th carbon
atom at antisite; correction of typo